Toshiba has introduced a smart gate drive photo-coupler with automatic recovery from some fault conditions.
Capable of driving ±2.5A into an IGBT or mosfet gate, it is called TLP5222, and is a partner to the TLP5212 announced earlier this month, which needs a signal on the primary side to initiate recovery from fault conditions.
“TLP5222 continuously monitors the mosfet drain-source voltage or IGBT collector-emitter voltage,” according to Toshiba. “If an over-current occurs, the driver’s built-in protection circuitry detects the associated rise in voltage and gently turns off the mosfet or IGBT. The driver’s automatic recovery function resumes normal operation, typically 25.5μs after protective turn-off is triggered. An isolated fault status pin indicates detection of the abnormal over-current.”
The device also has under-voltage lock-out and an integrated active Miller clamp to suppresses dV/dt-induced turn-on that might lead to short-circuiting the upper and lower arms of a half bridge.
Packaging is SO16L with creepage and clearance of at least 8mm. Operation is over -40 to +110°C.
Applications are foreseen in photovoltaic power generation systems and uninterruptible power supplies.