Called TLP5795H, it has an internal LED, photodiode and a rail-to-rail output driver typically capable of -4.5 and +5.3A with a 15 – 30V supply on the secondary side.
“Toshiba has improved the light output of the input-side infra-red LED and optimised the design of the light-receiving photodiode array compared to the current line-up,” it claimed.
The SO6L package has two lead bend options
Also inside is a Faraday shield, allowing the company to guarantee common-mode transient immunity of ±35kV/µs. Creepage and clearance are both 8mm.
Propagation delay is between 40 and 150ns in either direction, rise time is typically 33ns and fall time 22ns. All these are with a 15V supply, a load of 10Ω in series with 25nF, and 7mA or nothing through LED.
This is one of three similar new isolated gate drivers:
- TLP5791H: -1A +1A drive, 8.4 – 8.7V UVLO , ±20kV/µs
- TLP5794H: -6A +4A drive, 11 – 12.5V UVLO, ±50kV/µs
- TLP5795H -4.5A +5.3A drive, 11.7 – 12.7V UVLO, ±35kV/µs
All offer 5kVrms isolation, operation across -40 to +125°C, UL and cUL recognition, and VDE (option D4 types only) and CQC approval.
“The series is suitable for driving SiC mosfets and IGBTs in industrial photovoltaic inverters, uninterruptible power supplies and electric vehicle charging stations,” said Toshiba. “Propagation delay time exhibits low temperature dependence, enabling stable operation within the practical range defined by factory automation equipment.”
Further industrial mosfet and IGBT photocoupler gate drivers are in the pipeline for later this year.
Find the TLP5795H on this Toshiba web page.
Earlier this year, the same company announced similar products with a built-in active Miller clamp
