IQE and VisIC will collaborate to develop 200mm (8”) D-Mode GaN power epiwafers that will be developed at IQE’s UK facilities, leveraging IQE’s expertise in GaN technology.
“We believe that teaming up with IQE is a pivotal step towards reshaping the EV industry,” says VisIC founder and CEO Tamara Baksht, pictured (left) “our D-Mode D3GAN technology has the potential to transform electric vehicles, making them more efficient, reliable, and sustainable.”
VisIC’s D3GaN technology (Direct Drive D-Mode GaN) promises to reduce power consumption, increase reliability and enhance performance in electric vehicles.
By combining VisIC’s power electronics products with IQE’s epitaxy capabilities, the partnership aims to accelerate the adoption of GaN-on-Silicon technology in EVs.
“This is another sign of the progress we are making in our diversification strategy, as we look to 
capture the significant growth opportunities in the GaN automotive power market,” says IQE CEO Americo Lemos pictured (right),
The collaboration is a milestone in IQE’s strategy of diversification into the high-growth power market, first announced at its 2022 Capital Markets Day.
IQE sees significant opportunities in the GaN Power epiwafer market in particular, which is forecast by Yole Developpement to be worth $632 million by 2027.
