Gate drivers for 62mm SiC MOSFET and Si IGBT rated up to 1700V

Power Integrations is sampling a family of plug-and-play gate drivers for 62 mm  SiC MOSFET and silicon IGBT modules rated up to 1700 V, with enhanced protection features to ensure safe, reliable operation.

SCALE-2 2SP0230T2x0 dual-channel gate drivers deploy short-circuit protection in less than two microseconds, protecting the compact SiC MOSFETs against damaging over-currents.

The drivers include advanced active clamping (AAC) to protect the switches against over-voltage during turn-off, enabling higher DC link operating voltages.

“The gate drivers are flexible; the same hardware can be used to drive either SiC MOSFET or IGBT modules,” says PI’s Thorsten Schmidt, “this reduces both system design and sourcing challenges, and the plug-and-play approach speeds development.”

The devices are suitable for applications such as railway auxiliary converters, offboard EV chargers and STATic synchronous COMpensator (STATCOM) voltage regulators for the power grid..

PI’s compact 134 x 62 mm 2SP0230T2x0 provides reinforced isolation at 1700 V, enabling use for up to 1700 V operation.

For more: www.power.com.