APEC: 1,200V SiC mosfets in SOT-227 packaging

The modules come with or without a co-packaged Schottky diode, with current ratings between 30 and 113A, and on-resistance spanning 80mΩ to 20mΩ respectively (see table).

The SOT-227 package is designed to be bolted to a heatsink, and has screw terminals for its electrical connections.

Footprint on the heatsink is 38 x 25mm, and it is 12mm high not including M4 screw heads and attached conductors.

“All of the modules are tested at wafer-level gate burn-in to provide high-quality gate oxide with stable gate threshold voltage,” according to the company. “Besides the burn-in test, which helps to stabilise the extrinsic failure rate, tests such as gate stress, high-temperature reverse bias drain stress and H3TRB [high humidity, voltage and temperature] ensure requisite industrial grade quality levels.”

Picking the 1.2kV 18mΩ 113A GCMS020B120S1-E1 mosfet plus Schottky as an example, the diode can handle up to 106A continuously and the mosfet can be pulsed up to 250A. Up to 395W can be handled at 25°C and the junction is specified across -55 to +175°C.

Recommended gate drive is -5 to +20V, with maximums of -10V and +25V. Input capacitance is 5.3nF.

Applications are foreseen in electric vehicle chargers including on-board chargers, solar and wind energy converters and data centre power supplies.

“We’re excited to showcase our new family of 1,200V mosfet modules at APEC,” said company president Timothy Han. “Our power modules stand out for the rigorous testing that ensures reliability. All modules have undergone testing exceeding 1,350V. From gate burn-in testing to stress tests like HTRB and H3TRB, we prioritize stability and quality.”

APEC is to be held in Long Beach California over 25-29 February. Find SemiQ at booth 2245.

The GCMS020B120S1-E1 data sheet can be found here