It combines 1kV silicon IGBTs and 1.2kV silicon carbide diodes in the company’s F5BP package.
Called NXH500B100H7F5SHG, it can handle continuous collector currents up to 210A (630A pulsed) (Tj = 175°C). Abs max power dissipation is 305W.
To reducing stray inductance and thermal resistance, said the company, inside is a direct-bonded copper substrate and a copper baseplate.
IGBT-to-case thermal resistance is 0.198°C/W and, with thermal grease at the interface, 0.263°C/W chip-to-heatsink can be achieved. Thermal conductivity to the SiC diode die are 0.316°C/W and 0.405°C/W respectively.
Find the data sheet here
