“STGWA30IH160DF2 IGBT combines high thermal performance with efficiency in soft-switching topologies and easy paralleling,” claimed the company.
Nominal current rating is 30A (120A pulsed), and the device works with its junction up to 175°C. Thermal resistance is 0.36°C/W junction-to-case, and 0.81°C/W for the integrated reverse-parallel diode.
The transistor has a gate field-stop architecture – the first of a generation that ST is dubbing ‘IH2’ (1,350V 25 and 35A parts are in the pipeline) – intended to deliver a low saturation voltage to minimise conduction loss – Vce(sat) is typically 1.77V at 30A.
Tail current is also said to be minimised by the architecture, reducing turn-off energy – including tail current, turn-off energy is 1.83mJ (600V 30A 25°C), rising to 3mJ at 175°C.
For improved efficiency in resonant and soft-switching topologies, the anti-parallel diode has soft recovery – use is foreseen in single-switch quasi-resonant converters over 16 to 60kHz.
For paralleling, there is a positive Vce(sat) temperature coefficient and, said the company, tight parameter distribution – Vce(sat) max is 2.2(25°C) compared with the 1.77V typ value above (both 25°C).
ST’s STGWA30IH160DF2 IGBT web page is here
Also aimed at domestic cookers, Melexis announced a 24 x 32 pxel infra-red iumage sensor in April
