“Designed for multi-kilowatt-class applications, these devices combine GaN technology with a silicon-compatible gate drive input,” according to the company. “Offered in TOLT, TO-247 and TOLL package options, the devices give engineers the flexibility to customize their thermal management and board design.”
The result of Renesas purchase of Transphorm last year, internally these are cascode devices that combine a high-voltage depletion-mode GaN hemt, and a low-voltage silicon mosfet to provide gate compatibility – threshold voltage is 4V, which is higher than that of enhancement-mode GaN hemts. .
Part numbers are TP65H030G4PRS, TP65H030G4PWS and TP65H030G4PQS, sharing a 30mΩ die that Renesas is calling Gen IV plus, 14% smaller than Transphorm’s Gen IV platform and “delivering a 20% improvement in on-resistance output-capacitance-product”.
TOLL is a bottom-side-cooled surface-mount package and TOLT is top-side-cooled.
As an example, find the top-side-cooled TOLT TP65H030G4PRS on this Renesas web page
To go with the transistors is a 4.2kW totem-pole PFC evaluation board (RTDTTP4200W066A-KIT) is available.
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In May, Navitas Semiconductor announced an integrated 650V GaN totem-pole stage aimed at motor drives.
