The DO-221AC package, branded ‘SlimSMA HV’, has a 3.2mm minimum creepage distance.
“The diodes offer a 0.95mm profile compared to 2.3 mm for competing SMA and SMB packages,” said Vishay. “Their package features a moulding compound with a CTI of at least 600 to ensure electrical insulation.”
VS-3C01EJ12-M3 (1A 1.2kV), VS-3C02EJ07-M3 (2A 650V) and VS-3C02EJ12-M3 (2A 1.2kV) are the parts, all rated for +175 °C operation, with a a positive temperature coefficient for paralleling.
| VS-3C01EJ12-M3 | VS-3C02EJ07-M3 | VS-3C02EJ12-M3 | |
| If | 1A | 2A | 2A |
| Vr | 1,200V | 650V | 1,200V |
| Vf at If | 1.35V | 1.3V | 1.35V |
| Ir at Vr | 4.5μA (175°C) | 2μA (175°C) | 5μA (175°C) |
| Q | 7.5nC | 7.2nC | 13nC |
Inside, the technology is merged PIN-Schottky (MPS) to combine low capacitive charge with temperature-invariant switching behaviour for hard-switching designs, according to the company, which claims 7.2nC irrespective of temperature for at least on eof the dodes, and forward drop as low as 1.3V.
Use is foreseen as bootstrap, anti-parallel and PFC diodes in dc-dc and ac-dc converters.
Find the 1.2kV 2A VS-3C02EJ12-M3 SiC schottky on this Vishay web page
Diodes announced 640V SiC Schottkys between 4 and 12A in April
