Toshiba SOP Advance(E) power mosfet package web

  • TPM1R908QM 80V 238A 1.68mΩ max
  • TPM7R10CQ5 150V 120A 7.1mΩ max

Maximum junction to case thermal resistance is 0.6°C/W (25°C) in each case.

“The SOP Advance(E) package marks a substantial improvement over Toshiba’s existing ‘SOP Advance(N)’ package, reducing package resistance by approximately 65% and thermal resistance by approximately 15%,” according to the company, which compares  them to its existing 80V TPH2R408QM and 150V TPH9R00CQ5.

On-resistances above are with the gate at +10V.

Maximum channel temperature is 175°C.

To support circuit design, the company provides a G0 SPICE model for quick circuit function verification, alongside accurate G2 models for reproducing transient characteristics.

Applications are foreseen in industrial switched-mode power supplies.

Toshiba’s SOP Advance(E) package web page