“Production is expected to start in 2023, enabling a balanced supply of SiC substrate between internal and merchant supply,” said the company, which is planning to reach 40% internal substrate sourcing by 2024.
To be built alongside its existing SiC device fab in Catania, ST claims it will be the first in Europe with volume production of 150mm SiC epitaxial substrates. “ST is committed to develop 200mm wafers”, it added – the company is aiming to have a vertically integrated SiC business.
“The investment of €730m over five years will be supported financially by the State of Italy in the framework of the National Recovery and Resilience Plan and it will create around 700 direct additional jobs at full build-out,” said ST.
“We are expanding our operations in Catania, the centre of our power semiconductor expertise and where we already have integrated research, development and manufacturing of SiC with collaboration with Italian research entities, universities and suppliers,” ST CEO Jean-Marc Chery. “This new facility will be key to our vertical integration in SiC, reinforcing our SiC substrate supply as we ramp up volumes to support our automotive and industrial customers in their shift to electrification.”
More generally, he added: “ST is transforming its global manufacturing operations, with additional capacity in 300mm manufacturing and a focus on wide bandgap semiconductors to support its $20+bn revenue ambition.”
ST also has SiC capability at its Ang Mo Kio fab in Singapore. Back-end sites in Shenzhen and Bouskoura (Morocco) handle assembly and test.
Photo is of a 200mm SiC wafer at ST
