The transistor with a 40nm gate width produced a drive current of 410microamps per micron at Vds of 1V.
TSMC uses a transition-metal dichalcogenide monolayer for the semiconducting channel in a nanosheet transistor.
TSMC has integrated hafnium-based dielectrics formed by atomic layer deposition with the monolayer TMD material MoS2, to build a top-gated nFET with a physical dielectric thickness of 3.4 nm and an electrically equivalent oxide thickness (EOT) of ~1 nm.
The subthreshold voltage swing is less than 70mV/dec. and this indicates low leakage current when transistors are turned off.
