1mΩ is at 50A 25°C with 5V on the gate, and rises to ~1.8mΩ at the max operating temperature of 150°C (minimum is -40°C). The preliminary data sheet has no maximum Rds(on) figures – Electronics Weekly has requested this information.
The 0.65mm tall package is designed to dissipate heat through the PCB as well as via a heat spreader on top – junction-to-board thermal resistance is 1.5°C/W, while to junction-to-package-top is 0.2°C/W.
Connected to source potential, the top heat spreader is metallic “so for half-bridge topologies the thermal interface material needs to provide electrical isolation to the heatsink” warns the company.
Current handling is 101A continuous (25°C), or 519A for 300µs pulses.
As with all GaN hemt power transistors, there is no protective avalanche for over-voltage spikes. The company rates this one for 100V continuous, with a secondary rating of up to 10,000 5ms 120V pulses at 150°C to cover fault conditions.
For driving at 5V, total gate charge is 28nC, with the drain-source switching 50V 50A.
EPC90156 is a ~50 x 50mm development board on which a 100V 65A half-bridge is implemented with two of the new transistors and a Up1966E gate driver from Taiwan’s uPI Semiconductor – a company represented by EPC in Europe and the US.
Applications for EPC2361 are foreseen in ac-dc synchronous rectification, dc-dc conversion up to 80V (buck, boost, buck-boost and LLC) and 24 – 60V motor drives. Expected end-users include data centers, eMobility, robotics, drones and solar power converters.
EPC can be found on Booth 1,045 at the Applied Power Electronics Conference in California.
Find the preliminary EPC2361 data sheet here, and top-side cooling information in this app note
