Cambridge GaN Devices adds new packages

Cambridge GaN Devices has announced two new packages for its ICeGaN family of GaN power ICs which enhance thermal performance and simplify inspection.

The DHDFN-9-1 (Dual Heat-spreader DFN) is a thin, dual-side cooled package with a small, 10×10 mm footprint and wettable flanks to simplify optical inspection.

It offers low thermal resistance (R_th(JC), and can be operated with bottom-side, top-side and dual-side cooling, offering flexibility in design and out-performing the often-used TOLT package in top-side and, especially, dual-side cooled configurations.

The DHDFN-9-1 package has been designed with dual-gate pinout to facilitate optimal PCB layout and simple paralleling, enabling customers to address applications up to 6 kW with ease.

The BHDFN-9-1 (Bottom Heat-spreader DFN) is a bottom-side cooled package, also with wettable flanks for easy inspection. Thermal resistance is 0.28 K/W, matching or exceeding other leading devices.

Measuring 10×10 mm, the BHDFN is smaller than the commonly-used TOLL package yet shares a similar footprint, hence a common layout with TOLL-packaged GaN power ICs is possible for ease of use and evaluation.

“These new packages are part of our strategy to enable customers to use our ICeGaN GaN power ICs at higher power levels,” says CGD’s Nate Gabrielyan.

 Improving thermal resistance performance has several benefits. First, more power output is available at the same R_DS(on) .

Devices also run at cooler temperatures for the same power, so less heatsinking is required, resulting in reduced system costs.
Lower operating temperatures also lead to higher reliability and longer lifetimes.

Finally,  if cost is the constraint for the application, designers can use a lower cost part with a higher R_DS(on) and still achieve the required power output.