The new part is SSM14N956L and “uses Toshiba’s micro-process, in common with the already released 13.5A SSM10N954L”, according to the company.
Application circuit for the earlier SSM10N954L dual mosfet
Alongside the mosfets are clamp devices to protects the gates from excessive voltage as well as gate series resistors.
Packaging is 2.74 x 3.0mm x 85μm chip-scale package (Toshiba’s TCSPED-302701 package).
At 25°C and 10A, on-resistance is typically 1mΩ at 4.5Vg, 1.25mΩ at 3.1V and 1.6mΩ at 2.5V (3.2mΩ max at 2.5V)
“Additionally, the process delivers gate-source leakage current of ±1µAmax,” added Toshiba.
Applications are expected in smartphones, tablets, power banks and digital cameras.
The SSM14N956L product page can be found here, and an application note for the earlier SSM10N954L here.
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