The process is claimed to deliver up to 18% better performance at the same power for an entire processor core, a flexible set of metal interconnect options, and delivers up to 10% greater density than Intel 4.
“This represents an entire generation of performance improvement in just one year,” says Intel’s 
foundry technology development vp Walid Hafez. Intel’s five nodes in four years goal (5N4Y) to regain industry process leadership is now “closer to the finish line,” he says.
Variants of Intel 3 are:
Intel 3-T builds on the base process and offers through-silicon vias (TSVs) for 3D-stacking applications such has image processing, high-performance computing, and AI where multiple compute and memory components need to be integrated in a single package.
Intel 3-E adds in a set of I/O for external interfaces, analogue, and mixed signal features.
Intel 3-PT combines all these advances together into a single process and then adds in more performance enhancements alongside superior ease-of-use for designers, while including support for finer-pitch 9um TSVs and hybrid bonding options for higher-density 3D-stacking.
Intel 3 is designed to serve as a long-lasting node for foundry customers, with a continual progression of technology feature and performance enhancements to serve a wide array of design and product applications.
“We are delivering on our promise of consistent execution against our 5N4Y plan and paving the way for our transition to RibbonFET and the angstrom era with the Intel 20A and Intel 18A process nodes being introduced over the coming year,” says Hafez.
