Magnachip to mass manufacture 650V IGBT for solar inverters

Magnachip Semiconductor is about to start volume production of a 650V IGBT for solar inverters.

In March 2022, Magnachip developed a 65 IGBT built with field stop trench technology for fast switching speed and high breakdown voltages and the company will begin mass production of it this month.

This IGBT is designed to provide a minimum short-circuit withstand time of 5µs and it is optimized for parallel switching because of its positive temperature coefficient. The parallel switching of this IGBT will increase the load current and thus the maximum output power.

The  650V IGBT has anti-parallel diodes for fast switching and low switching loss, while guaranteeing a maximum operating junction temperature of 175°C.

Based on standards issued by the Joint Electron Device Engineering Council (JEDEC), this new IGBT can be widely used for applications requiring strict power level and high efficiency, such as solar boost inverters and converters, uninterruptible power supplies and universal power inverters.

Magnachip’s IGBT products for the solar energy market