“It was designed for circuit protection applications including solid-state circuit breakers, where low resistance, thermal performance and reliability are paramount,” according to the company. This “JFET can withstand high instantaneous junction temperatures without experiencing degradation or parametric drift. The normally-on nature of the JFET lends itself to integration into systems where the switch is in the on-state by default and in turn-off state under fault conditions”.
UJ4N075004L8S, as it will be known, is sampling now with production scheduled for Q4.
4.3mΩ is a achieved with +2V on the gate (80Ads Tj=25°C), rising to 9.9mΩ at Tj=175°C.
With 0V on the gate the typical figures are 4.9 and 11.5mΩ respectively. The only max figure is 6.6mΩ at Vg=0V Tj=25°C.
A gate drive of -20V is expected to turn the device off. To improve gate drive fidelity, there is a separate source terminal for the driver.
For improved thermal resistance, die attach is silver-sintered to typically achieve 0.10°C/W junction-to-case (0.13°C/W max).
The device is short-circuit rated for 5μs from a 400V Tj=175°C start.
The company also has 750V 5mΩ and 1.2kV 8mΩ jfets in TO-247 packaging.
Electronics Weekly has asked Qorvo for specific applications where normally-on circuit breakers are preferred, and for example circuit diagrams.
Find the divice on this web page or in hall 7 on stand 406 at PCIM in Nuremberg (closes 13 June).
