The money will be paid in two stages with an initial grant of €2.5 million from the EIC Accelerator followed by an equity investment of €2.75 million from the EIC Fund.
The GCRAM memory cell is a 3T DRAM cell with a substantially extended refresh period. With AI applications requiring more SRAM, RAAAM sees an opportunity to offer a a superior drop-in replacement for SRAM.
GCRAM claims to deliver a 50% reduction in die size with a 10x reduction in power consumption compared tomSRAM. It claims to enable voltage scaling capabilities of 450mV read and write voltage in 16nm FinFET process technology.
RAAAM says the technology has been validated on nodes down to 16nm and ‘successfully evaluated” in 5nm.
RAAAM is headquartered in Israel with a design centre in Switzerland.
