EPC Space has announced 100V and 200V rad-hard GaN power transistors for space use “with ultra-low on-resistance and extremely low gate charge for high power density solutions”, according to the company.
Judge for yourself, these are the typical values:
- EPC7007B (200V 18A): 28mΩ 5.4nC
- EPC7018G (100V 90A): 6mΩ 11.7nC
“These additions to our rad-hard product line enable a generation of power conversion and motor drives in space operating at higher efficiencies and greater power densities than what is achievable with traditional silicon-based rad-hard solutions,” said EPC Space CEO Bel Lazar.
| Part | VDS | RDS(on) | single pulse |
package | Total dose |
Single event (VDS=100% of breakdown) |
| EPC7018G | 100V | 6 mΩ | 345 A | 8.0 x 5.6 | 1,000krad | 85MeV/mg/cm2 |
| EPC7007B | 200V | 28 mΩ | 80 A | 5.7 x 3.9 | 1,000krad | 85MeV/mg/cm2 |
Applications are foreseen in dc-dc power supplies, robot motor drives, instrumentation, reaction wheels and ion thrusters in satellites and deep space vehicles.
Don’t expect change out of $300 when buying space grade versions. Engimeering samples cost less.
