Rohm and Ancora Semiconductors develop GaN HEMTs

Ancora started in 2010 as an R&D project in power electronics  at Delta Electronics and a laboratory was set up for it in 2012.

In 2022 the lab was spun off as a fabless semiconductor company based in Taiwan backed with $15 million by Rohm, Delta, Sino-American Silicon and UPI Semiconductors.

The GNP1070TC-Z and GNP1150TCA-Z  devices developedwith Rohm claim industry-leading performance in terms of R_DS(ON) × C_iss / R_DS(ON) × C_oss, a figure of merit for GaN HEMTs.

At the same time, a built-in ESD protection element improves electrostatic breakdown resistance up to 3.5kV, leading to higher application reliability.

GaN HEMTs’ high-speed switching characteristics also contribute to greater miniaturization of peripheral components.