Yole Group and SERMA Technologies have combined to provide an analysis of the SiC MOSFET industry.
They compare the performance of five SiC MOSFETs: Wolfspeed (C3M0075120D), ROHM (SCT3080KLHR), Infineon (AIMW120R080M1), STMicroelectronics (SCTW40N120G2VAG), and Anbonsemi (AS1M080120P).
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1200V SiC MOSFET is the enabler of the BEV transition to 800V system. Indeed, SiC MOSFETs have become pivotal in power electronics, transforming numerous applications with their exceptional performance traits.
SiC MOSFETs offer impressive high breakdown voltage, low on-state resistance, and excellent thermal conductivity, positioning them as ideal choices for power-switching devices in high-frequency and high-temperature settings.
The comparative analysis includes the evaluation of key metrics such as on-state resistance, drain-to-source voltage, threshold voltage, breakdown voltage, and leakage currents under various operating conditions.
The report also presents data and graphs of important parameters of the devices tested, including RDS(on)(VGS), RDS(on)(IDS), VDS, VGS(th), VBR(DSS), IDSS, IGSS, QG, IDS(VDS), and ISD(VSD) tested at various temperatures (from -55°C up to 175°C). For example, the temperature evolution of the Vgs(th) and the breakdown voltage Vbr were characterized to assess the temperature stability behavior of the compared devices all over the temperature range.
“Performance tests are conducted at various temperatures (-55°C, -40°C, 25°C, 150°C, 175°C) and adhere to JEDEC norms and standards, such as JESD 24 and JEP 183,” says Yole’s Pierre-Emmanuel Blanc, “the test protocol, outlined in the report, involves testing three DuT s for each reference.”
This third-party objective analysis, conducted under identical test conditions, is claimed to offer a more reliable performance comparison than device datasheets typically provide.
Yole has conducted a physical analysis of all devices, including optical and SEM images and detailed measurements for package opening and die cross-section. These parameters are compiled to facilitate a comprehensive analysis of their impact on device performance.
The report also includes the final component cost for each device and compares them based on their “performance versus cost” tradeoff.
