Yangtze Memory says it has a 232-layer NAND putting it on the same technological level as Micron and LG who announced, respectively, 232-level and 238-level devices last week.

Yangtze designates the chip the X3-9070, made on the third generation of its proprietary Xtacking architecture, and says it “has become the highest bit density flash product in YMTC’s history,” without specifying the number of bits it can store.

It is not clear at what stage the chip has reached, but it could be up against a production challenge – the US is considering banning the sale to China of production equipment capable of making chips above 128-layers.


Micron says it is already in production of its 232-layer device. LG says it will put its 238-layer device into production in H1 2023.

Yangtze, the most successful of all China’s chip startups, is hooking up equipment in its 200k wpm Fab2 which, it hopes, will give it 10% of the world NAND market.